Basic Information
Model NO.
SFS04R013UGF PDFN5 x 6
Characteristics
Excellent Stability and Uniformity
Production Capacity
20kkkk/Monthly
Product Description
FSMOS® MOSFET is based on unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Key Features
- Low RDS(ON) & FOM (Figure of Merit)
- Extremely low switching loss
- Excellent reliability and uniformity
- Fast switching and soft recovery
- AEC-Q101 Qualified for Automotive Applications
Applications
- Consumer electronic power supply
- Motor control
- Synchronous rectification
- Isolated DC/DC convertor
- Invertors
Key Performance Parameters
| Parameter |
Value |
Unit |
| VDS | 40 | V |
| ID, pulse | 600 | A |
| RDS(ON) max @ VGS=10V | 1.1 | mΩ |
| Qg | 118.4 | nC |
Absolute Maximum Ratings (Tj=25°C)
| Parameter |
Symbol |
Value |
Unit |
| Drain source voltage | VDS | 40 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current, TC=25 °C | ID | 200 | A |
| Pulsed drain current, TC=25 °C | ID, pulse | 600 | A |
| Power dissipation, TC=25 °C | PD | 178 | W |
| Single pulsed avalanche energy | EAS | 144 | mJ |
| Operation and storage temperature | Tstg, Tj | -55 to 175 | °C |
Thermal Characteristics
| Parameter |
Symbol |
Value |
Unit |
| Thermal resistance, junction-case | RθJC | 0.84 | °C/W |
| Thermal resistance, junction-ambient | RθJA | 62 | °C/W |
Dynamic Characteristics
| Parameter |
Symbol |
Typ. |
Unit |
Test Condition |
| Input capacitance | Ciss | 5453 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz |
| Output capacitance | Coss | 1951 | pF |
| Reverse transfer capacitance | Crss | 113 | pF |
| Total gate charge | Qg | 85.6 | nC | VGS=10 V, VDS=40 V, ID=40 A |
| Gate-drain charge | Qgd | 14.5 | nC |
Notes:
1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. VDD=30 V, VGS=10 V, L=0.3 mH, starting Tj=25 °C.
Frequently Asked Questions
Is the SFS04R013UGF suitable for automotive applications?
Yes, this model is AEC-Q101 Qualified, making it highly reliable for various automotive electronic systems.
What is the maximum Drain-Source voltage for this MOSFET?
The SFS04R013UGF has a rated Drain-Source breakdown voltage (VDS) of 40V.
What are the main benefits of the FSMOS® technology?
It offers low RDS(ON), minimal gate charge, and fast switching speeds, which significantly reduce power loss and improve efficiency in power systems.
In which industries is this product commonly used?
It is widely applied in PC Power supplies, LED Lighting, Motor Control, and Synchronous Rectification systems.
What is the package type of this MOSFET?
This product comes in a compact and thermally efficient PDFN5 x 6 package.
What is the typical Gate Charge (Qg) for this device?
The typical total gate charge (Qg) is 85.6 nC, while the marking information lists a value of 118.4 nC under specific conditions.
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